Synergistically Stabilizing Hole Transport Layer and Dual Interface Enables High-Performance Perovskite Solar Cells
Dongmei He, Danqing Ma, Ru Li, Baibai Liu, Qian Zhou, Hua Gui Yang, Shirong Lu, Zhengfu Zhang, Caiju Li, Xiong Li, Liming Ding, Jing Feng, Jianhong Yi, Jiangzhao Chen
Abstract
The migration and diffusion of Li + and halide ions, as well as the volatilization of 4-tert butylpyridine ( t BP), seriously restrain the long-term operational stability of n- i -p perovskite solar cells (PSCs). Herein, we employ l -glutamic acid dibenzyl ester 4-toluenesulfonate (GADET) to simultaneously modulate the hole transport layer (HTL) and buried interface, which stabilizes the HTL and minimizes interfacial energy loss by immobilizing Li +, t BP, and halide ions and passivating dual interface defects. After forming Spiro-OMeTAD •+ TFSI –, GADET impedes the Li + ion diffusion through the ionic bond interaction of P-methylbenzenesulfonate anion and Li +, while the formation of the hydrogen bond of −NH 3 + with t BP can suppress the volatilization of t BP. Moreover, the halide ion migration and interfacial trap-induced nonradiative recombination are inhibited via passivating undercoordinated Pb and halide vacancy defects based on multiple chemical bonds. The synergistically modified devices achieve a champion efficiency of 25.06% (certified PCE of 24.08%). Meanwhile, the stability of PSCs was significantly improved.