Exciton strain mapping in 2D TMDCs for sensing and photodetection
Chandraman Patil, Jiachi Ye, Haoyan Kang, Hao Wang, Belal Jahannia, Salam Altaleb, Elham Heidari, Navid Asadizanjani, Volker J. Sorger, Hamed Dalir
Abstract
Here we demonstrate Tungsten Disulfide (WS<sub>2</sub>) integrated silicon nitride photodetector, and we experimentally tested the responsivity of 0.32 A/W. The spectroscopic results using PL and Raman mapping were used to understand strain effect on excitonic bandgap by studying characteristics like excitons, trions, E<sup>1</sup><sub>2g</sub>, A<sup>1</sup><sub>g</sub> and opto-electronic response. We show high potential for flexible sensors and high spectral resolution sensing.
Topics & Concepts
PhotodetectionResponsivityExcitonPhotodetectorRaman spectroscopyOptoelectronicsMaterials scienceStrain (injury)SiliconTungsten CompoundsWide-bandgap semiconductorBand gapPhysicsTungstenCondensed matter physicsOpticsMedicineInternal medicineMetallurgyNanowire Synthesis and Applications2D Materials and ApplicationsDiamond and Carbon-based Materials Research