Visualizing Grain Statistics in MOCVD WSe<sub>2</sub> through Four-Dimensional Scanning Transmission Electron Microscopy
Alejandra Londoño‐Calderón, Rohan Dhall, Colin Ophus, Matthew M. Schneider, Yongqiang Wang, Enkeleda Dervishi, Hee Seong Kang, Chul‐Ho Lee, Jinkyoung Yoo, Michael T. Pettes
Abstract
, we observe a high density of small grains that corresponds with the overall selenium deficiency we measure through ion beam analysis. Moreover, reconstruction of grain information permits the creation of orientation maps that demonstrate the nucleation mechanism for new layers-triangular domains with the same orientation as the layer underneath induces a tensile strain increasing the lattice parameter at these sites.
Topics & Concepts
Metalorganic vapour phase epitaxyChemical vapor depositionNucleationMaterials scienceTransmission electron microscopyScanning electron microscopeSiliconGrain boundaryCrystallographyAnalytical Chemistry (journal)OptoelectronicsMicrostructureNanotechnologyLayer (electronics)ChemistryComposite materialEpitaxyOrganic chemistryChromatography2D Materials and ApplicationsGraphene research and applicationsSemiconductor materials and interfaces