Advancing the Frontiers of HfO <sub>2</sub> ‐Based Ferroelectric Memories: Innovative Concepts from Materials to Applications
Zuopu Zhou, Lingqi Li, Yang Feng, Xiaolin Wang, Zijie Zheng, Leming Jiao, Haofei Zheng, Yufei Shi, Kah‐Wee Ang, Xiao Gong
Abstract
Abstract The emergence of HfO 2 ‐based ferroelectric materials has revolutionized ferroelectric memory technologies, which overcome several key challenges of conventional ferroelectric materials and exhibit outstanding performance, aligning with the surging demands from data‐centric computing. In this review, a comprehensive overview of recent developments in HfO 2 ‐based ferroelectric memories is provided, spanning materials research, device engineering, integration strategies, and emerging applications. At the material level, advances in thickness and grain size scaling are discussed, as well as the investigation on polarization switching dynamics and cryogenic behavior. On the device front, progress is examined in ferroelectric field‐effect transistors (FeFETs), including alternative channel materials and gate stack designs, as well as novel device concepts beyond traditional FeFET architectures. Integration strategies to realize high‐density, high‐bandwidth memories, including the 3D stacking architectures and monolithic integration with logic transistors, are also reviewed. Finally, applications are explored that extend beyond conventional data storage. Through this multi‐faceted review, the aim is to identify both the technological opportunities and remaining challenges associated with HfO 2 ‐based ferroelectric memories, with the goal of inspiring further innovations in this emerging field.