Scaling of MoS<sub>2</sub> Transistors and Inverters to Sub-10 nm Channel Length with High Performance
Jinpeng Tian, Qinqin Wang, Xudan Huang, Jian Tang, Yanbang Chu, Shuopei Wang, Cheng Shen, Yancong Zhao, Na Li, Jieying Liu, Yiru Ji, Biying Huang, Yalin Peng, Rong Yang, Wei Yang, Kenji Watanabe, Takashi Taniguchi, Xuedong Bai, Dongxia Shi, Luojun Du, Guangyu Zhang
Abstract
Two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS 2 ) are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from their atomic thickness, dangling-bond-free flat surface, and excellent gate controllability. However, despite great prospects, the fabrication of 2D ultrashort channel FETs with high performance and uniformity remains a challenge. Here, we report a self-encapsulated heterostructure undercut technique for the fabrication of sub-10 nm channel length MoS 2 FETs. The fabricated 9 nm channel MoS 2 FETs exhibit superior performances compared with sub-15 nm channel length including the competitive on-state current density of 734/433 μA/μm at V DS = 2/1 V, record-low DIBL of ∼50 mV/V, and superior on/off ratio of 3 × 10 7 and low subthreshold swing of ∼100 mV/dec. Furthermore, the ultrashort channel MoS 2 FETs fabricated by this new technique show excellent homogeneity. Thanks to this, we scale the monolayer inverter down to sub-10 nm channel length.