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Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current

Jiyao Du, Taofei Pu, Xiaobo Li, Liuan Li, Jin‐Ping Ao, Hongwei Gao

2023Journal of Crystal Growth11 citationsDOI

Topics & Concepts

Materials scienceOptoelectronicsHigh-electron-mobility transistorTransistorBreakdown voltageThreshold voltageLeakage (economics)Insulator (electricity)SemiconductorVoltageElectrical engineeringEconomicsMacroeconomicsEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties
Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current | Litcius