Controlled growth of atomically thin transition metal dichalcogenides via chemical vapor deposition method
Jingwei Wang, Tianran Li, Qi Wang, W. Wang, Run Shi, Ning Wang, Abbas Amini, Chun Cheng
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDC) have attracted great research interest due to their potential application in electronics, optoelectronics, electrocatalysis, and so on. To satisfy expectations, high-quality materials with designed structures are highly desired through the controlled growth of TMDC. Chemical vapor deposition (CVD) offers facile control in synthesizing 2D TMDC as well as a high degree of freedom for tuning their structures and properties. In this review, we elaborate on recent advances in CVD techniques for synthesizing atomically thin TMDC. The novel techniques for achieving continuous uniform 2D films are provided along with insights into the growth mechanisms. Moreover, approaches toward high-quality materials by growing large single crystals and oriented domains are thoroughly summarized. The strategies for controlling the crystal thickness, phase, and doping condition are also discussed. Finally, we address the challenges in the field and prospective research directions.