Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence

Souvik Mahapatra, Narendra Parihar

2020IEEE Transactions on Device and Materials Reliability37 citationsDOI

Abstract

Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> time kinetics during and after DC and AC stress at different stress (VGSTR) and recovery (VGREC) biases, temperature (T), pulse duty cycle (PDC) and frequency (f) is modeled. The influences of Nitrogen content (N%) in the gate insulator stack, Germanium content (Ge%) in the channel, and mechanical strain due to dimension scaling and layout are explained. The framework is used to analyze measured data from planar, Fully Depleted Silicon on Insulator (FDSOI) and FinFET devices having Silicon (Si) and Silicon Germanium (SiGe) channels.

Topics & Concepts

Materials scienceNegative-bias temperature instabilitySilicon on insulatorDuty cycleMOSFETSilicon-germaniumStress (linguistics)SiliconTinElectronic engineeringOptoelectronicsGermaniumElectrical engineeringVoltageEngineeringTransistorMetallurgyPhilosophyLinguisticsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignIntegrated Circuits and Semiconductor Failure Analysis