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A 10T Soft-Error-Immune SRAM With Multi-Node Upset Recovery for Low-Power Space Applications

Soumitra Pal, Shubham Sahay, Wing‐Hung Ki, Chi-Ying Tsui

2022IEEE Transactions on Device and Materials Reliability19 citationsDOI

Abstract

In this paper, a 10T Soft-Error-Immune SRAM (SIS10T) is proposed for space applications. To gauge the relative performance of SIS10T, it is compared with QUATRO10T, QUATRO12T, QUCCE12T, DICE12T and RHD12T. SIS10T can recover from single-event upsets of both polarities induced at all the sensitive nodes, as well as from single event multi-node upsets induced at its internal node-pair. Furthermore, SIS10T shows (consumes) a <inline-formula> <tex-math notation="LaTeX">$1.66\times $ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$1.65\times $ </tex-math></inline-formula>)/ <inline-formula> <tex-math notation="LaTeX">$1.62\times $ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$1.35\times $ </tex-math></inline-formula>)/ <inline-formula> <tex-math notation="LaTeX">$1.46\times $ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$1.72\times $ </tex-math></inline-formula>)/ <inline-formula> <tex-math notation="LaTeX">$1.09\times $ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$2.06\times $ </tex-math></inline-formula>) higher read stability (lower hold power) than QUATRO12T/ QUATRO10T/ QUCCE12T/ DICE12T &#x0040; <inline-formula> <tex-math notation="LaTeX">${V}_{\text {DD}} = 1$ </tex-math></inline-formula> V. It also exhibits the highest write ability.

Topics & Concepts

NotationMathematicsNode (physics)Discrete mathematicsArithmeticPhysicsQuantum mechanicsRadiation Effects in ElectronicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design