The aggregation phenomenon of impurity atoms in Si and the properties of C-doped Si studied by first-principle calculations
Jianing Wang, Zhihui Yue, Hao Lu, Jieshi Chen
Topics & Concepts
DopingBand gapSemiconductorMaterials scienceAtom (system on chip)ImpuritySiliconGermaniumElectronic band structureElectronic structureCrystallographyCondensed matter physicsChemical physicsChemistryComputational chemistryOptoelectronicsOrganic chemistryPhysicsEmbedded systemComputer scienceSemiconductor materials and interfacesSemiconductor materials and devicesSilicon Nanostructures and Photoluminescence