Structural, morphological, and metal-oxide-semiconductor characteristics of thulium oxide passivation layer grown in nitrogen-oxygen-nitrogen ambient
Junchen Deng, Hock Jin Quah
Topics & Concepts
PassivationAnnealing (glass)OxideNitrogenAnalytical Chemistry (journal)Materials scienceForming gasOxygenBand gapInorganic chemistryChemistryLayer (electronics)OptoelectronicsMetallurgyComposite materialEnvironmental chemistryOrganic chemistrySemiconductor materials and devicesMicrowave Dielectric Ceramics SynthesisElectronic and Structural Properties of Oxides