Improved memory and synaptic device performance of HfO2-based multilayer memristor by inserting oxygen gradient TiOx layer
Jihee Park, Heeseong Jang, Yongjin Byun, Hyesung Na, Hyeonseung Ji, Sungjun Kim
Topics & Concepts
MemristorMaterials scienceLayer (electronics)Resistive random-access memoryOptoelectronicsOxygenNanotechnologyElectronic engineeringChemistryElectrical engineeringVoltageOrganic chemistryEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering