N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR
Alexandra F. Paterson, Ruipeng Li, Anastasia Markina, Leonidas Tsetseris, Sky Marie Macphee, Hendrik Faber, Abdul‐Hamid Emwas, Julianna Panidi, Helen Bristow, Andrew Wadsworth, Derya Baran, Denis Andrienko, Martin Heeney, Iain McCulloch, Thomas D. Anthopoulos
Abstract
Charge transport in organic non-fullerene acceptor n-type organic transistors is improved by synergistic doping effects and morphological changes.
Topics & Concepts
FullereneMaterials scienceDopingAcceptorCharge (physics)Organic semiconductorNanotechnologyChemical physicsOptoelectronicsOrganic chemistryCondensed matter physicsChemistryPhysicsQuantum mechanicsOrganic Electronics and PhotovoltaicsAdvanced Memory and Neural ComputingConducting polymers and applications