Litcius/Paper detail

Intrinsic Mechanism for Anisotropic Magnetoresistance and Experimental Confirmation in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>Co</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>Fe</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:mrow></mml:math> Single-Crystal Films

Fanlong Zeng, Z. Y. Ren, Y. Li, Jiang Zeng, Mengwen Jia, Jun Miao, Axel Hoffmann, Wenli Zhang, Yizheng Wu, Zhe Yuan

2020Physical Review Letters76 citationsDOIOpen Access PDF

Abstract

Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co_{x}Fe_{1-x} alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special k points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes.

Topics & Concepts

MagnetoresistanceCondensed matter physicsAnisotropyMaterials scienceAlloyOrientation (vector space)Crystal (programming language)PhysicsComputer scienceGeometryMagnetic fieldQuantum mechanicsMetallurgyMathematicsProgramming languageMagnetic properties of thin filmsQuantum and electron transport phenomenaPhysics of Superconductivity and Magnetism