Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors
Abhishek Chatterjee, Shailesh K. Khamari, Ravi Kumar, S. Porwal, A. Bose, T. K. Sharma
Topics & Concepts
Materials scienceMetalorganic vapour phase epitaxyOptoelectronicsDislocationEpitaxyThermionic emissionUltravioletNanotechnologyComposite materialPhysicsElectronQuantum mechanicsLayer (electronics)GaN-based semiconductor devices and materialsGa2O3 and related materialsPhotocathodes and Microchannel Plates