High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering
Yuanyuan Zhang, Qianqian Chen, Ruijuan Qi, Hao Shen, Fengrui Sui, Jing Yang, Wei Bai, Xiaodong Tang, Xuefeng Chen, Zhengqian Fu, Genshui Wang, Shujun Zhang
Abstract
Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO 3 /PbTiO 3 ) n with a maximum recoverable energy storage density of 36.4 J/cm 3 due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at n = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.