Over 1.8 GW/cm2 beveled-mesa NiO/<i>β</i>-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability
Feng Zhou, Hehe Gong, Zhengpeng Wang, Wanli Xu, Xinxin Yu, Yi Yang, Fangfang Ren, Shulin Gu, R. Zhang, Yi Zheng, Hai Lu, Jiandong Ye
Abstract
In this Letter, we demonstrate a large-area (1-mm2) beveled-mesa p-NiO/β-Ga2O3 bipolar heterojunction diode (HJD) with a high Baliga's figure of merit of 1.84 (2.87) GW/cm2 from DC (pulsed) measurements. Benefiting from the suppression of electric field crowing at the designed mesa edge and bipolar current conductivity modulation, the resultant device exhibits advantageous characteristics, including a low subthreshold slope of 65 mV/decade, a low DC (pulsed) differential specific on-resistance of 2.26 (1.45) mΩ cm2, a high current density of 2 kA/cm2, and a high breakdown voltage of 2.04 kV. In particular, the Ga2O3 HJD exhibits an 800 V/10 A extreme switching capability with 16.4-ns reverse recovery characteristics, as well as high operation stability at a high temperature of 200 °C. This work, thus, makes a significant step toward reaching the promise of a high figure-of-merit in β-Ga2O3 power devices.