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Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD

Yong Du, Buqing Xu, Guilei Wang, Shihai Gu, Ben Li, Zhenzhen Kong, Jiahan Yu, Guobin Bai, Junjie Li, Wenwu Wang, Henry H. Radamson

2021Journal of Materials Science Materials in Electronics20 citationsDOI

Topics & Concepts

Metalorganic vapour phase epitaxyMaterials scienceSurface roughnessOptoelectronicsEpitaxyWaferBuffer (optical fiber)Surface finishLayer (electronics)Gallium arsenideDislocationNanotechnologyComposite materialTelecommunicationsComputer scienceSemiconductor Quantum Structures and DevicesSemiconductor materials and devicesNanowire Synthesis and Applications
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD | Litcius