A two-dimensional MoSe<sub>2</sub>/MoSi<sub>2</sub>N<sub>4</sub> van der Waals heterostructure with high carrier mobility and diversified regulation of its electronic properties
Xiaolin Cai, Zhengwen Zhang, Yingying Zhu, Long Lin, Weiyang Yu, Qin Wang, Xuefeng Yang, Xingtao Jia, Yu Jia
Abstract
Using first-principles calculations, we design a novel 2D vertical MoSe<sub>2</sub>/MoSi<sub>2</sub>N<sub>4</sub> vdWH, which has high carrier mobility up to 10<sup>4</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and easily tunable electronic properties.
Topics & Concepts
Materials scienceElectron mobilityHeterojunctionElectronic structurevan der Waals forceCondensed matter physicsCrystallographyAtomic physicsPhysicsOptoelectronicsMoleculeChemistryQuantum mechanics2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications