Characterization methods for defects and devices in silicon carbide
Marianne Etzelmüller Bathen, C. T.-K. Lew, Judith Woerle, Christian Dorfer, Ulrike Großner, Stefania Castelletto, Brett C. Johnson
Abstract
Significant progress has been achieved with silicon carbide (SiC) high power electronics and quantum technologies, both drawing upon the unique properties of this material. In this Perspective, we briefly review some of the main defect characterization techniques that have enabled breakthroughs in these fields. We consider how key data have been collected, interpreted, and used to enhance the application of SiC. Although these fields largely rely on separate techniques, they have similar aims for the material quality and we identify ways in which the electronics and quantum technology fields can further interact for mutual benefit.