High-speed Graded-channel GaN HEMTs with Linearity and Efficiency
Jeong‐Sun Moon, Bob Grabar, M. Antcliffe, Joel Wong, Chuong Dao, Peter Chen, Erdem Arkun, Isaac Khalaf, A. Corrion, James M. Chappell, Nivedhita Venkatesan, Patrick Fay
Abstract
We report high-speed graded-channel GaN HEMTs with 10 dB OIP3 improvement over current conventional AlGaN/GaN HEMTs at the same DC power. Thus, the graded-channel GaN HEMTs demonstrated a record OIP3/Pdc of 17 - 20 dB at 30 GHz. Also, these graded-channel GaN HEMTs demonstrated PAE of 75 % at 1.2 W/mm output power density. The measured PAE and output power density show great improvement over reported PAE of other mm-wave T-gated AlGaN/GaN HEMT devices.
Topics & Concepts
High-electron-mobility transistorMaterials scienceOptoelectronicsPower densityGallium nitrideChannel (broadcasting)Wide-bandgap semiconductorPower (physics)LinearityTransistorElectrical engineeringLayer (electronics)VoltagePhysicsComposite materialEngineeringQuantum mechanicsGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSemiconductor Quantum Structures and Devices