Extended-Source Double-Gate Tunnel FET With Improved DC and Analog/RF Performance
Tripuresh Joshi, Yashvir Singh, Balraj Singh
Abstract
In this article, we propose an extended-source double-gate tunnel field-effect transistor (ESDG-TFET) to enhance the dc and analog/RF performance. The source of an ESDG-TFET is extended into channel to increase the line and point tunneling in the device at the source-channel junction. 2-D simulations in the TCAD tool (ATLAS) are carried out to analyze and investigate the performance of the proposed device. At optimized device structural parameters, the ESDG-TFET provides a low threshold voltage of 0.42 V, a low subthreshold swing of 12.24 mV/decade, and a high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> of 2.57 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> . Furthermore, the proposed device achieves a maximum transconductance of 238 μS/μm, a cutoff frequency of 37.7 GHz, and a gain bandwidth product of 3.4 GHz.