Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts
Loredana Viscardi, Kimberly Intonti, Arun Kumar, Enver Faella, Aniello Pelella, Filippo Giubileo, Stephan Sleziona, Osamah Kharsah, Marika Schleberger, Antonio Di Bartolomeo
Abstract
Herein, the fabrication and electrical characterization of multilayer black phosphorus (BP)‐based field effect transistors with Ni or NiCr alloy contacts are reported. The devices show p‐type conduction and hysteresis in the transfer characteristics that enable their use as nonvolatile memories. The differences between Ni and NiCr contacts are investigated and the Y‐function method is applied to extract the channel mobility up to 112 cm 2 V −1 s −1 and the contact resistances. Ni contacts present specific contact resistance of 6.3 k Ω μm that increases to 18.1 k Ω μm for NiCr. These findings are important for the technological exploitation of multilayer BP in a new class of electronic and optoelectronic devices.