Phase control of α- and κ-Ga2O3 epitaxial growth on LiNbO3 and LiTaO3 substrates using α-Fe2O3 buffer layers
Kazuki Shimazoe, Hiroyuki Nishinaka, Yuta Arata, Daisuke Tahara, Masahiro Yoshimoto
Abstract
LiNbO3 and LiTaO3 substrates are used in wide-bandwidth applications such as surface acoustic wave filter and show structural similarity to α-Ga2O3. In this study, we demonstrated the phase control of Ga2O3 epitaxial thin films, grown by mist chemical vapor deposition, on the (0001) planes of LiNbO3 and LiTaO3 substrates using α-Fe2O3 buffer layers. κ-Ga2O3 thin films were grown epitaxially on bare LiNbO3 and LiTaO3 substrates. Conversely, the insertion of the α-Fe2O3 buffer layer led to the preferential growth of the α-Ga2O3 epitaxial thin films. X-ray diffraction (XRD) φ-scan results revealed that the α-Ga2O3 thin films were grown along the same in-plane direction as that of the substrates. Besides, the XRD φ-scan results indicated that twin-free α-Ga2O3 was grown on the LiNbO3 and LiTaO3 substrates with the α-Fe2O3 buffer layers. The x-ray rocking curve scans of the asymmetric plane of α-Ga2O3 showed that the full width at half maximum values of α-Ga2O3 on the LiNbO3 and LiTaO3 substrates with the buffer layers were smaller than that of the c-plane α-Al2O3 substrate with and without the buffer layer. In addition, we grew the (11-20) and (1-100) planes of the α-Ga2O3 epitaxial thin films on the (11-20) and (1-100) planes of LiNbO3 substrates with the α-Fe2O3 buffer layer, respectively. This study showed that LiTaO3 and LiNbO3 are promising substrates for the epitaxial growth of α-Ga2O3 and κ-Ga2O3.