Ultrasensitive fully transparent amorphous Ga<sub>2</sub>O<sub>3</sub> solar-blind deep-ultraviolet photodetector for corona discharge detection
Haowen Liu, Shuren Zhou, Hong Zhang, Lijuan Ye, Yuanqiang Xiong, Peng Yu, Wanjun Li, Xun Yang, Honglin Li, Chunyang Kong
Abstract
Abstract Solar-blind deep-ultraviolet photodetectors are one of the most effective tools to detect corona discharge because high-voltage corona discharge is always accompanied by deep-ultraviolet light (UVC, 200–280 nm), referred to as solar-blind signals. In this study, a fully transparent metal-semiconductor-metal solar-blind photodetector with Al-doped ZnO (AZO) transparent electrodes was successfully constructed based on amorphous Ga 2 O 3 film (a-Ga 2 O 3 ) and prepared by radio frequency magnetron sputtering. The as-fabricated fully transparent device exhibits excellent performance, including an ultra-low dark current of 2.84 pA, a high photo-to-dark current ratio of 1.41 × 10 7 , superb rejection ratio (R 254 /R 400 = 2.93 × 10 5 ), a large responsivity of 2.66 A W −1 , superb detectivity (4.84 × 10 14 Jones), and fast response speed (rise/fall time: 24 μ s/1.24 ms). It is worth noting that the fully transparent a-Ga 2 O 3 photodetector demonstrates ultra-high sensitivity to weak solar-blind signals, far below the 100 nW cm −2 threshold of the test equipment. It also has high-resolution detection capabilities for subtle changes in radiation intensity. Acting as a sensor for the high-voltage corona discharge simulation detection system, the fully transparent a-Ga 2 O 3 photodetector can clearly detect extremely weak solar-blind signals. The results described in this work serve as proof-of-concept for future applications of amorphous Ga 2 O 3 solar-blind deep-ultraviolet photodetectors in high-voltage corona discharge detection.