Planar GaN Power Integration – The World is Flat
Kevin J. Chen, Jin Wei, Gaofei Tang, Han Xu, Zheyang Zheng, Li Zhang, Wenjie Song
Abstract
GaN power IC's are expected to help unlock the full potential of GaN power electronics, especially in terms of promoting the high-frequency power switching applications. This paper first discusses a GaN power integration technology platform based on commercially available p-GaN gate HEMT technology. An integrated gate driver is presented as an example of GaN power IC with enhanced performance, in which a bootstrap unit is adopted to realize rail-to-rail output voltage and fast switching speed. To deal with GaN-specific design issues such as the unique dynamic V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> , a SPICE model of p-GaN gate HEMT is developed to improve design accuracy. Future prospects for GaN power integration are discussed by extending the integration's landscape to multi-functional GaN power devices, GaN CMOS technology, and GaN/SiC hybrid power IC's.