High-performance grating couplers on 220-nm thick silicon by inverse design for perfectly vertical coupling
Mingxiang Yang, Yunjie Yan, Zhenlin Wu, Yiying Gu, Shiyuan Zhao, Geert Morthier, Mingshan Zhao
Abstract
Efficient grating couplers (GCs) for perfectly vertical coupling are difficult to realize due to the second-order back reflection. In this study, apodized GCs (AGCs) are presented for achieving perfectly-vertical coupling to 220 nm thick silicon-on-insulator (SOI) waveguides in the C-band. We compare the performance of the AGCs to that of uniform GCs (UGCs) and demonstrate the superiority of the former. The AGCs were obtained through inverse design using gradient-based optimization and were found to effectively suppress back reflection and exhibit better matching to the Gaussian beam profile. The design and measurement results show that AGCs have a 3 dB lower coupling loss than UGCs. We fabricated focusing AGCs by electron beam lithography with a single, 70 nm shallow etch and a minimum feature size of 100 nm, which makes them compatible with CMOS technology. The AGCs achieved a coupling efficiency of -5.86 dB for perfectly vertical coupling. Overall, our results demonstrate the potential of AGCs for achieving high-performance coupling in the C-band on the SOI platform.