Few‐layered MoS<sub>2</sub> Based Vertical van der Waals p‐n Homojunction by Highly‐efficient N<sub>2</sub> Plasma Implantation
Yufeng Shan, Ziwei Yin, Jiaqi Zhu, Xin Li, Wei Dou, Yue Wang, Chixian Liu, Huiyong Deng, Ning Dai
Abstract
Abstract 2D transition metal dichalcogenides have shown great potential for next‐generation microelectronic devices owing to their ability to prolong the life of Moore's law by mitigating the short‐channel effect. Recently, many efforts have been made on doping 2D films to create p‐n junctions, in which plasma implantation has been placed great expectations due to its CMOS process compatibility. However, ultrathin vertical 2D p‐n homostructure with excellent rectification behaviors have rarely been studied so far. Herein, MoS 2 van der Waals p‐n homojunctions are fabricated by highly efficient N 2 plasma implantation. Kelvin probe force microscope reveals the surface potential difference of ≈130 mV between n‐MoS 2 and p‐MoS 2 . The fabricated field‐effect transistor (FET) presents a high rectification ratio up to 3.1 × 10 –3 at the gate bias V GS = 20 V, which is over 20 times larger than that of the vertical homojunction obtained by surface chemical doping. The forward current is mainly dominated by both the interlayer recombination and band‐to‐band tunneling, while the ultra‐low reverse current in the order of 10 pA is governed by direct tunneling. The results demonstrate a new CMOS‐compatible way to fabricate vertical 2D homojunction, which is the basic structure of many low‐dimensional microelectronic devices.