Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays
Xinyi Xu, Hongchao Zhang, Chuanpeng Jiang, Jinhao Li, Shiyang Lu, Yunpeng Li, Honglei Du, Xueying Zhang, Zhaohao Wang, Kaihua Cao, Weisheng Zhao, Shuqin Lyu, Hao Xu, Bonian Jiang, Le Wang, Bowen Man, Cong Zhang, Dandan Li, Shuhui Li, Xiaofei Fan, Gefei Wang, Hongxi Liu
Abstract
We have systematically investigated the reliability performance of spin-orbit torque (SOT) magnetic random access memory (MRAM) devices, including electromigration (EM), stress migration (SM), endurance and data retention. The results show that the SOT-MRAM devices pass the EM requirement over 10 years lifetime under the operation condition, and pass the SM requirement over 1000 hours baking at 175°C. Moreover, high endurance close to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cycles and robust data retention over 10 years storage time were demonstrated for the same SOT-MRAM devices. This full characterization fills the blank of SOT-MRAM reliability research and would contribute to the commercialization of the SOT-MRAM.