Distorted octahedral site occupation-induced high-efficiency broadband near-infrared emission in LiScGe<sub>2</sub>O<sub>6</sub>:Cr<sup>3+</sup> phosphor
X. H. Chen, Enhai Song, Yayun Zhou, F. Q. He, Jianqiao Yang, Qinyuan Zhang
Abstract
Benefiting from a proposed distorted octahedral site occupation strategy using Cr 3+ , we demonstraed a high-efficiency broadband NIR-emitting phosphor LiScGe 2 O 6 :Cr 3+ peaking at 886 nm with a full width at half maximum of 160 nm and a record external quantum efficiency of ∼40%.
Topics & Concepts
PhosphorOctahedronMaterials scienceBroadbandQuantum efficiencyInfraredFull width at half maximumOpticsOptoelectronicsCrystallographyPhysicsCrystal structureChemistryLuminescence Properties of Advanced MaterialsPhotorefractive and Nonlinear OpticsLuminescence and Fluorescent Materials