Tunable digital-to-analog switching in Nb2O5-based resistance switching devices by oxygen vacancy engineering
Jing Xu, Hongjun Wang, Yuanyuan Zhu, Yong Liu, Zhaorui Zou, Guoqiang Li, Rui Xiong
Topics & Concepts
MiniaturizationMaterials scienceResistive random-access memoryNeuromorphic engineeringOptoelectronicsNon-volatile memoryLayer (electronics)Vacancy defectNanotechnologyPulsed laser depositionOxygenThin filmElectrical engineeringComputer scienceChemistryVoltageEngineeringOrganic chemistryMachine learningArtificial neural networkCrystallographyAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials