Fast Response Solar-Blind Ultraviolet Photodetector Based on the <i>β</i>-Ga₂O₃/p-Si Heterojunction
Haoyan Dong, Shufang Ma, Yanping Niu, Zhi Yang, Shuai Zhang, Yu Hu, Xiaodong Hao, Bin Han, Guoqiang Li, Hailiang Dong, Bingshe Xu
Abstract
Regular <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula> -Ga2O3 nanowires were successfully prepared on the p-Si substrate via chemical vapor deposition. More significantly, a simple method was invented to prepare a heterojunction photodetector of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula> -Ga2O3 nanowire network/p-Si substrate. The photodetector exhibited excellent photodetection performance at room temperature, including a response/decay time of 30/20 ms, a high light on/off ratio of 5309, and a rectification ratio of 164.22, etc. The impact of the energy band structure between <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula> -Ga2O3 nanowire and p-Si substrate, the large specific surface area and the optical trapping effect of nanowire network on the device performance were analyzed. Our research offers an original way to integrate <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula> -Ga2O3 nanowires with the Si-based substrate.