Epitaxy of multilayer-stacking MoS2 crystal microstructures by chemical vapor deposition
Binbin Ding, Lianbi Li, Lianbi Li, Kaiwen Gong, Lei Li, Lei Li, Tianming Wang, Yaxian Yang, Changjun Zhu, Zebin Li, Guoqing Zhang, De-Zhong Cao, Caijuan Xia, Wenzhi Yu
Abstract
Stacking structures show great potential for the modulation of physical properties of two-dimensional materials. However, most studies have focused on bilayer (BL) stacking MoS 2 with same morphology. Here, we report a simple but effective process for manufacturing multilayer stacking MoS 2 crystal microstructures. The epitaxial growth mechanism is investigated by studying a typical trilayer (TL) stacking MoS 2 with different shapes. Raman and photoluminescence (PL) mapping exhibit high homogeneity and obvious boundary contrast between the different structures. The TL-MoS 2 microstructure field-effect transistor (FET) shows high carrier mobility and on/off ratio, which is related to stacking configuration. It is note that type I junction can form between the different structures and the obvious photocurrent observed are in the junction region. The 15.3° twisted BL-AB stacking MoS 2 Moiré superlattices with a period of 1.39 ± 0.05 nm. This work provides a reference for the development and application of multilayer-stacking MoS 2 .