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On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability

Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi

2022Applied Physics A67 citationsDOIOpen Access PDF

Topics & Concepts

FerroelectricityMaterials scienceOptoelectronicsTransistorPolarization (electrochemistry)SiliconElectronTrappingEngineering physicsField-effect transistorElectric fieldHafniumDielectricElectrical engineeringChemistryVoltagePhysicsQuantum mechanicsBiologyMetallurgyEcologyEngineeringPhysical chemistryZirconiumFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials
On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability | Litcius