Stabilization of top-gate p-SnO transistors <i>via</i> ultrathin Al<sub>2</sub>O<sub>3</sub> interlayers for hysteresis-free operation
Minki Choe, Seung Ho Ryu, Jihoon Jeon, Inhong Hwang, Jae Min Jung, Jae‐Yoon Shim, Sung Ki Lee, Taek‐Mo Chung, Noh‐Hwal Park, Seong Keun Kim, In-Hwan Baek
Abstract
Hysteresis-free and stable operation achieved in top-gate SnO TFTs by inserting an Al 2 O 3 interlayer that protects the surface of the metastable SnO channel.
Topics & Concepts
Materials scienceHysteresisTransistorOptoelectronicsCondensed matter physicsCrystallographyElectrical engineeringVoltageChemistryPhysicsEngineeringSemiconductor materials and devicesAdvanced Memory and Neural ComputingElectronic and Structural Properties of Oxides