Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array
E. R. Hsieh, Xin Zheng, Binh Le, Yi-Chun Shih, Robert M. Radway, Matthew D. Nelson, Subhasish Mitra, S.S. Wong
Abstract
We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving 1T8R array with 4 bits per RRAM. We report SET/RESET endurance of 100K cycles and 10-year retention at 110°C.
Topics & Concepts
Resistive random-access memoryReset (finance)TransistorNon-volatile memoryResistive touchscreenRandom access memoryElectrical engineeringData retentionSet (abstract data type)Logic gateComputer scienceOptoelectronicsComputer hardwareMaterials scienceVoltageEngineeringFinancial economicsProgramming languageEconomicsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices