γ-ray Radiation Hardness of CsPbBr<sub>3</sub> Single Crystals and Single-Carrier Devices
Lei Gao, Jia‐Lin Sun, Qiang Li, Qingfeng Yan
Abstract
The superior environmental stability of all-inorganic metal halide perovskites compared to their organic–inorganic counterparts makes them more promising in practical applications. Here, the stability of an archetypical all-inorganic CsPbBr3 single crystal and its single-carrier devices under 60Co γ-ray irradiation was investigated. The CsPbBr3 single crystal itself shows ostensible hardness as its structural and optical properties present imperceptible changes even with a total ionizing dose of 800 krad. Unexpectedly, the single crystal-based single-carrier devices exhibit apparent dose-dependent hardness. The performance of the hole-only device suffers from more deterioration than the electron-only device under high irradiation doses (>400 krad). Our results reveal that such a discrepancy originates from the different influences of γ-ray irradiation-induced defects on the transport behaviors of holes and electrons in CsPbBr3 single-crystal devices. These findings offer a new understanding of the interaction mechanism between γ-photons and all-inorganic metal halide perovskite-based devices.