Calculation of static and dynamic losses in power IGBT‑transistors by polynomial approximation of basic energy characteristics
Олександр Плахтій, Volodymyr Nerubatskyi, Denys Hordiienko, Hryhorii Khoruzhevskyi
Abstract
Purpose. Development of a calculation technique that allows the Matlab software to determine the static and dynamic losses in power IGBTtransistors and reverse diodes.
Topics & Concepts
Insulated-gate bipolar transistorPolynomialPower (physics)Energy (signal processing)MathematicsApplied mathematicsControl theory (sociology)Computer sciencePhysicsMathematical analysisStatisticsThermodynamicsArtificial intelligenceControl (management)Induction Heating and Inverter TechnologyDifferential Equations and Numerical Methods