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Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm

K. Husna Hamza, D. Nirmal, A.S. Augustine Fletcher, L. Arivazhagan, J. Ajayan, Ramkumar Natarajan

2021AEU - International Journal of Electronics and Communications32 citationsDOI

Topics & Concepts

TransconductanceHigh-electron-mobility transistorCutoff frequencyMaterials scienceOptoelectronicsTransistorVoltageElectrical engineeringEngineeringGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesGa2O3 and related materials
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