Impact of oxygen partial pressure on resistive switching characteristics of PLD deposited ZnFe2O4 thin films for RRAM devices
Senthilkumar Rajarathinam, Udayan Ganguly, N. Venkataramani
Topics & Concepts
Partial pressureMaterials scienceThin filmOxygenResistive random-access memoryPulsed laser depositionResistive touchscreenOptoelectronicsMicrostructureDeposition (geology)Analytical Chemistry (journal)NanotechnologyComposite materialElectrical engineeringVoltageChemistryBiologyOrganic chemistrySedimentPaleontologyChromatographyEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesElectronic and Structural Properties of Oxides