Tunable multiple nonvolatile resistance states in a MnSe-based van der Waals multiferroic tunnel junction
Xiaohui Guo, Lin Zhu, Zeng-Lin Cao, K.L. Yao
Abstract
as the electrodes, the TER can be further improved from 349% to 618%. Moreover, there is a perfect spin filtering effect in these MFTJs. This work demonstrates the potential applications of MnSe-based devices in multistate nonvolatile memories and spin filters, which will stimulate experimental studies on layer-controllable spintronic devices.
Topics & Concepts
Quantum tunnellingvan der Waals forceMagnetoresistanceCondensed matter physicsFerromagnetismMaterials scienceMultiferroicsFerroelectricityTunnel magnetoresistanceElectrodeNon-volatile memoryOptoelectronicsPhysicsChemistryMoleculeMagnetic fieldPhysical chemistryQuantum mechanicsDielectric2D Materials and ApplicationsGraphene research and applicationsMXene and MAX Phase Materials