High-temperature mid-wavelength infrared avalanche photodiode with modified fully-depleted absorption and multiplication region
Liqi Zhu, Zihao Wang, Jiamu Lin, Jian Huang, Liang He, Xi Wang, Songmin Zhou, Zhikai Gan, Xun Li, Qingxin Li, Li He, Changqing Lin, Chun Lin, Baile Chen, Chun Lin, Baile Chen
Abstract
Abstract Mid-wavelength infrared (MWIR) avalanche photodiodes (APD) are extensively employed in high-precision detection and thermal imaging in complex context. However, conventional MWIR APD’s detection typically requires low-temperature operation to relieve signal-to-noise limitations imposed by narrow bandgap materials. Here, to address this challenge, we present the high-temperature-operating MWIR avalanche photodiodes with a modified fully-depleted absorption, multiplication region (MFDAM) to suppress the high dark current. At 80 K, the proposed APD achieves comparable gain-normalized dark current density (GNDCD) still <6 × 10 −10 A/cm 2 at gain <20. At 160 K, the GNDCD preserves consistently below 2 × 10 −6 A/cm 2 for gain values less than 189, while the excess noise holds below 1.4 and the noise equivalent power is <7.2 × 10 −16 W/Hz 1/2 of 3.5 μ m. The device is also validated for imaging targets up to 200 km away at a gain of <10. These results enable the MFDAM APDs to be promising and desirable for future high-temperature-operating MWIR detection applications.