Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe<sub>2</sub>O<sub>3</sub>/Pt Bilayers
Yihong Fan, Pengxiang Zhang, Jiahao Han, Yang Lv, Luqiao Liu, Jian‐Ping Wang
Abstract
Abstract Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, UMR in antiferromagnetic insulator Fe 2 O 3 /Pt structure is reported. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness‐dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work reveals the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet‐based spintronic devices.
Topics & Concepts
AntiferromagnetismMagnetoresistanceCondensed matter physicsSpintronicsMaterials scienceFerromagnetismBilayerInsulator (electricity)Magnetic fieldPhysicsOptoelectronicsMembraneChemistryBiochemistryQuantum mechanicsMagnetic properties of thin filmsFerroelectric and Negative Capacitance DevicesPhysics of Superconductivity and Magnetism