ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb<sub>2</sub>S<sub>3</sub>-based Photovoltaics
Pascal Büttner, Florian Scheler, Craig A. Pointer, Dirk Döhler, Tadahiro Yokosawa, Erdmann Spiecker, Pablo P. Boix, Elizabeth R. Young, Ignacio Mínguez‐Bacho, Julien Bachmann
Abstract
. Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration.
Topics & Concepts
Materials scienceAtomic layer depositionPhotovoltaicsAntimonyOptoelectronicsBand gapPhotovoltaic systemSemiconductorEnergy conversion efficiencyOpen-circuit voltageRecombinationSolar cellDielectric spectroscopyNanotechnologyLayer (electronics)VoltageChemistryGeneElectrodePhysicsQuantum mechanicsPhysical chemistryElectrochemistryBiochemistryBiologyEcologyMetallurgyChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesCopper-based nanomaterials and applications