Dimensional and Doping Engineering of Chiral Perovskites with Enhanced Spin Selectivity for Green Emissive Spin Light-Emitting Diodes
Li‐Zhe Feng, Yong‐Hui Song, Zidu Li, Bai‐Sheng Zhu, Zhenyu Ma, Jun‐Nan Yang, Yi‐Chen Yin, Jing‐Ming Hao, Guan‐Jie Ding, Yanru Wang, Zhi Zhao, Hongmin Zhou, Fengjia Fan, Hong‐Bin Yao
Abstract
Chiral perovskites play a pivotal role in spintronics and optoelectronic systems attributed to their chiral-induced spin selectivity (CISS) effect. Specifically, they allow for spin-polarized charge transport in spin light-emitting diodes (LEDs), yielding circularly polarized electroluminescence at room temperature without external magnetic fields. However, chiral lead bromide-based perovskites have yet to achieve high-performance green emissive spin-LEDs, owing to limited CISS effects and charge transport. Herein, we employ dimensional regulation and Sn 2+ -doping to optimize chiral bromide-based perovskite architecture for green emissive spin-LEDs. The optimized (PEA) x (S/R-PRDA) 2– x Sn 0.1 Pb 0.9 Br 4 chiral perovskite film exhibits an enhanced CISS effect, higher hole mobility, and better energy level alignment with the emissive layer. These improvements allow us to fabricate green emissive spin-LEDs with an external quantum efficiency (EQE) of 5.7% and an asymmetry factor | g CP-EL | of 1.1 × 10 –3 . This work highlights the importance of tailored perovskite architectures and doping strategies in advancing spintronics for optoelectronic applications.