Theoretical Investigation of Rhodium-Decorated Gallium Nitride Nanotubes for Sulfur Hexafluoride Decomposition Products Sensing and Scavenging Applications
Qingfang Zhang, Shoutao Fan, Jitao Zhang, Qianyu Chen, Yufeng Ding, Xiaowan Zheng, Aijuan Zhang, Lingzhi Cao, Bochang Li, Genquan Han
Abstract
Gas-insulated switchgear (GIS) plays an important role as a modern power distribution device in power plants and power stations, which is commonly filled with SF 6 insulating gas. During the equipment operation, the inevitable partial discharge causes SF 6 to be broken down into gas (SF 4, SOF 2, SO 2, and H 2 S), which degrades the insulation performance of the GIS. This paper is devoted to the detection of partial discharge and the removal of SF 4 and SOF 2, which are not conducive to insulation, by exploring new gas-sensing materials for characteristic gas detection. Based on first-principles calculation, on the one hand, the most stable adsorption configurations of rhodium-decorated gallium nitride nanotubes (Rh-GaNNTs) and gas adsorption systems were obtained. On the other hand, the doping and adsorption mechanisms were analyzed by band structure, density of states, deformation charge density, and molecular orbital theory. Subsequently, the gas-sensitive performance of Rh-GaNNTs for these four impurity gases was evaluated by analyzing the sensing response and recovery time. The adsorption stability and recovery time of Rh-GaNNTs to these gases are ranked as SF 4 > SOF 2 > SO 2 > H 2 S; the order of influence of gas adsorption on sensitivity response is H 2 S > SO 2 > SF 4 ≈ SOF 2 . Calculation results show the potential of Rh-doped surfaces as reusable H 2 S and SO 2 sensors and suggest their use as gas scavengers to remove SF 4 and SOF 2, especially SOF 2 .