A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z–V) measurements
Ç. Ş. Güçlü, Esra Erbilen Tanrıkulu, A. Dere, Ş. Altındal, Yashar Azizian‐Kalandaragh
Topics & Concepts
Materials scienceThermionic emissionSaturation currentDopingSchottky diodeDiodeAnalytical Chemistry (journal)Band gapWaferCapacitanceSaturation (graph theory)Schottky barrierSemiconductorVoltageOptoelectronicsElectrodeElectrical engineeringChemistryElectronPhysical chemistryMathematicsPhysicsEngineeringCombinatoricsQuantum mechanicsChromatographySemiconductor materials and interfacesIntegrated Circuits and Semiconductor Failure AnalysisNanowire Synthesis and Applications