Quantum transport of sub-5 nm InSe and In<sub>2</sub>SSe monolayers and their heterostructure transistors
Hailing Guo, Yinheng Yin, Wei Yu, John Robertson, Sheng Liu, Zhaofu Zhang, Yuzheng Guo
Abstract
SSe MOSFET can satisfy both the low power and high-performance requirements for the international technology roadmap for semiconductors in the next decade and can provide a feasible approach for enhancing device performance.
Topics & Concepts
HeterojunctionMaterials scienceMonolayervan der Waals forceTransistorOptoelectronicsSemiconductorMOSFETField-effect transistorNanotechnologyVoltagePhysicsQuantum mechanicsMolecule2D Materials and ApplicationsMXene and MAX Phase MaterialsPerovskite Materials and Applications