Multiscale CFD Modeling of Area-Selective Atomic Layer Deposition: Application to Reactor Design and Operating Condition Calculation
Sungil Yun, Henrik Wang, Matthew Tom, Feiyang Ou, Gerassimos Orkoulas, Panagiotis D. Christofides
Abstract
Area-selective atomic layer deposition (ASALD) as a bottom-up nanopatterning technique has gained recognition for its ability to address misalignment issues in semiconductor manufacturing. This in silico study investigates process operation conditions for ASALD of SiO2/Al2O3 and reactor optimization by using multiscale computational fluid dynamics (CFD) modeling. Several reactor designs were modeled in Ansys Workbench and their results compared to ensure effective reagent separation and homogeneous exposure to reagents across the wafer. Annular reaction zones and asymmetrical inlets enhanced uniform exposure to reagents and minimized reagent intermixing, which allowed the reactor to tolerate higher rotational speeds. Additionally, low rotation speeds and high species mole fractions were required for complete deposition of a cycle of the ASALD process. This research provides insight into the ASALD process operation and contributes to further industrial versatility.