Enhancing Breakdown Voltage of a Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode with Small-Angle Beveled and High-k Oxide Field Plate
Dinghe Liu, Yu‐Wen Huang, Zeyulin Zhang, Dazheng Chen, Qian Feng, Hailong You, Jincheng Zhang, Chunfu Zhang, Yue Hao
Abstract
To increase their breakdown voltage, Ga 2 O 3 Schottky barrier diodes (SBDs) with a beveled field plate were designed based on TCAD platform simulations. The small-angle beveled field plate can effectively alleviate the electric field concentration effect. The breakdown voltage of Ga 2 O 3 SBDs can reach 1217 V with the SiO 2 dielectric and a small-angle (1°) beveled field plate. However, the breakdown mechanism is the early breakdown of the dielectric layer. TO further increase the breakdown voltage, the replacement of SiO 2 with a high-k dielectric (Al 2 O 3 and HfO 2 ) can transfer the breakdown location into the Ga 2 O 3 drift layer. By combining the beveled small-angle design and the high-k dielectric, the device demonstrates a Baliga’s figure of merit of 2.94 GW cm −2 and breakdown voltage of 3108 V.